• detekuje nitridované polovodičové wafery
  • laserová dioda 785 nm Class I
  • LED bar zobrazuje úroveň odraženého světla a prahovou úroveň
  • nízký odběr (80 mA)
  • elektricky a mechanicky kompatibilní se standardními průmyslovými snímači
  • potlačení okolního světla
  • Custom Form Factors is Available (NRE charges may apply)
Detection Method Laser Beam with Photodetectors
Light Source 780 nm Class I Laser Diode (0.050mW max. power)
Detecting Distance 1.5” (38mm) or custom (2”/ 3”/ 4’)
Response Time ON delay 38µs max. / OFF delay 5ms min (user selectable)
Laser Spot Size 12.7 mm x 0.15 mm
Angular Coverage +17°,-25° (relative to the sensor front surface)
Detectable Wafers 3” to 12”, Different Thicknesses and Coatings (including Nitride wafers)
Power 8 to 24 VDC / 100mA max.
Settings Pin Hole for Threshold Adjustment
Interface (Input and Output) 4 Wire Cable
Indicators Green LED = Sensor ON ; Blue LED = Object Present; LED Bar
Output NPN Open Collector (internal or external pull-up resistor), 80 mA max.
Materials Aluminum Case, Glass Lenses, RG9 Filter
Overall Dimensions 3.5” x 1.5” x 0.65” (88.9 mm x 38.1 mm x 16.5 mm)
Weight 3.2 oz (92 g)